Chemically Induced Charge Redistribution at Al-GaAs Interfaces
- 5 February 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (6) , 397-401
- https://doi.org/10.1103/physrevlett.42.397
Abstract
We show that the exchange reaction between Al and GaAs at the microscopic interface produces a charge redistribution in two stages which determines Schottky-barrier formation.Keywords
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