Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application
- 14 May 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (10) , 342-344
- https://doi.org/10.1049/el:19810242
Abstract
Mobilities of undoped GaAs-n-doped AlxGa1−xAs heterostructures are shown to present a maximum as a function of the thickness of the undoped AlxGa1−xAs spacer layer. This maximum increases as the temperature decreases. The transition temperature above which phonon scattering is dominant decreases as d increases. Heterostructure FETs working at 11 GHz give an 8 dB gain.Keywords
This publication has 1 reference indexed in Scilit:
- Transport properties in GaAs-Al
x
Ga
1−
x
As heterostructures and MESFET applicationElectronics Letters, 1981