A small GSM power amplifier module using Si-LDMOS driver MMIC

28 September 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01936530,p. 196-522
https://doi.org/10.1109/isscc.2004.1332661

Abstract

A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm/sup 2/ includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.

Keywords

GSM
POWER AMPLIFIERS
DRIVER CIRCUITS
MMICS
MOSFETS
COSTS
POWER GENERATION
VOLTAGE CONTROL
POWER SYSTEM RELIABILITY
TEMPERATURE

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