Thermal donors in silicon: oxygen clusters or self-interstitial aggregates
- 30 October 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (30) , L967-L972
- https://doi.org/10.1088/0022-3719/18/30/001
Abstract
There is a long-standing view that small aggregates of oxygen impurities in silicon produced by heat treatments at 450 degrees C are the defects that act as thermal donors. Recently it has been established that these treatments also lead to the generation of self-interstitials. It is now suggested that small aggregates of these intrinsic defects should alternately be considered as the complexes giving the donor properties.Keywords
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