A kinetics scheme for the XeF laser
- 15 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (2) , 148-151
- https://doi.org/10.1063/1.90287
Abstract
A kinetics scheme is described for electron‐beam excitation of the XeF laser in a neon diluent. Both Ne+ and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major intermediary in forming the upper laser level. Xe+2 is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.Keywords
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