Self-assembled InSb and GaSb quantum dots on GaAs(001)

Abstract
Quantum dots of InSb and GaSb were grown on GaAs(001) by molecular‐beam epitaxy.In situscanning tunneling microscopymeasurements taken after 1–2 monolayers of InSb or GaSbgrowth reveal the surface is a network of anisotropic ribbon‐like platelets. These platelets are a precursor to quantum dotgrowth.Transmission electron microscopymeasurements indicate that the quantum dots are coherently strained. Quantum dots of InSb and GaSb capped by GaAs exhibit strong luminescence near 1.1 eV.