Observation of built-in electric field in InP self-assembled quantum dot systems
Open Access
- 17 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (20) , 3002-3004
- https://doi.org/10.1063/1.123993
Abstract
Strong Franz–Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembledquantum dots. These oscillations manifest a built-in electric field of about 30 kV/cm. We propose that this field originates from electric charge captured by the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defect states is found to be a general feature of the InP/InGaP interface but was not observed in other structures with quantum dots such as InAs/GaAs.Keywords
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