Carrier-induced index change in AlGaAs double-heterostructure lasers
- 9 July 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (14) , 506-507
- https://doi.org/10.1049/el:19810354
Abstract
A large carrier-induced index change is reported for conventional 8 μm-stripe oxide-isolated AlGaAs double-heterostructure lasers. At threshold, the index change of the active layer is −0.05 to −0.07, which is a factor of 5 to 10 larger than previously reported. It is accompanied by an even greater change in dispersion. These effects cannot be explained by a free-carrier effect, and are most likely caused by a carrier-induced shift of the absorption edge.Keywords
This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978