Control of gate leakage in InAlAs/InGaAs HEMTs

15 August 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (17) , 1592-1593
https://doi.org/10.1049/el:19910996

Abstract

In_0.53Ga_0.47As FETs exhibit excess gate leakage, caused by impact ionisation in the channel. In JFETs and HFETs this leads to high gate leakage in the peak gain region. It is shown here that suitably fabricated InAlAs/InGaAs HEMTs can have low gate leakage in the high gain region because band bending leads to a lower collection efficiency for holes generated by impact ionisation.

Keywords

GATE LEAKAGE CONTROL
LOW GATE LEAKAGE
BAND BENDING
INALAS-INGAAS
IMPACT IONISATION
HIGH GAIN REGION
SEMICONDUCTORS

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