Kinetics of processes in the Ti–Si1−xGex systems

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Abstract
The kinetics of processes related to the formation of C49 and C54 Ti(Si1−y Ge y )2 germanosilicide phases in the two relaxed and strained Ti/Si1−x Ge x systems (x 1=0.35 and x 2=0.20) in the temperature range 600–800 °C are considered. These processes have been studied through Auger electron spectroscopy, secondary ion mass spectroscopy, x‐ray diffraction, and Raman scattering spectroscopy supported by ion beam etching techniques. Si/Ge ‘‘intergrain’’ alloy has been found between the grains of the C49 or/and C54 phases, with a Ge‐rich part Si1−z Ge z of z=2x–3x in the upper region. At higher temperatures, the Ge concentration in the Ge‐rich alloy decreases and its volume increases. The temperature required for obtaining similar changes are higher when x 2<x 1. A kinetic electron‐related model is proposed to explain the observed phenomena.

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