The effect of pressure on Gunn phenomena in gallium arsenide
- 1 June 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (6) , 601-604
- https://doi.org/10.1016/0038-1101(66)90001-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- MICROWAVE OSCILLATIONS IN GaAsxP1-x ALLOYSApplied Physics Letters, 1965
- Mechanism of the Gunn Effect from a Pressure ExperimentPhysical Review Letters, 1965
- Improved Test Cell Material for the Tetrahedral Anvil ApparatusNature, 1965
- Load Discontinuity Method for Pressure Calibration : the Tetrahedral Anvil Apparatus below 25 KilobarsNature, 1964
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960