New method to control composition ratio of alloy films by compressed magnetic field–magnetron sputtering technique

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Abstract
We propose a new method to control a composition ratio of Si to refractory metal by a compressed magnetic field–magnetron sputtering source. This magnetron sputtering source has two magnetic coils, one is a conventional magnetron coil behind the target (Bm) and the other is a compressing coil (Bc) to increase magnetic field parallel to the target surface. The Bm and Bc can control the spatial position of intense plasma on the target surface. Experiments were performed using a 98-mm Si target with an additional ring-shaped Ta target, which has 98-mm outer diameter and 5-mm width. The Si/Ta ratio of sputtered films was controlled from 1 to 10 only by changing Bc from 108 to 197 G for constant Bm (=630 G).

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