1.5 μm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy

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Abstract
4 pags.; 4 figs.Oxygen-doped Si epitaxial films (OXSEF) grown by molecular beam epitaxy and subsequently\ud implanted with Er show room-temperature luminescence around il = 1.54 ,um. The 45-nm-thick\ud films have an oxygen concentration of 10 at. % and were implanted with 7.8 X lOI4 25 keV Er\ud ions/cm’. The luminescence was optically excited with the 514 nm line of an Ar ion laser and\ud is attributed to intra-4f transitions in Er3+. Thermal annealing at 700-800 “C is necessary to\ud optimize the luminescence after implantation. Pure Si implanted and annealed under the same\ud conditions does not show Er-related luminescence at room temperature. The emission from Er\ud in OXSEF is attributed to the high concentration of oxygen in the films, which forms complexes\ud with Er. The excitation of Er3+ is due to a photocarrier mediated mechanism.This work is part of the research program of the\ud Foundation for Fundamental research on Matter (FOM)\ud and was made possible by financial support from the Dutch\ud Organization for the Advancement of Pure Research\ud (NWO) , the Netherlands Technology Foundation\ud (STW), and the IC Technology Program (IOP ElectroOptics)\ud of the Ministry of Economic Affairs. R. S. acknowledges\ud financial support from CSIC, Spain.Peer Reviewe

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