A Radiation Hardened Nano-Power 8Mb SRAM in 130nm CMOS

1 March 2008

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 19483287,p. 23-29
https://doi.org/10.1109/isqed.2008.4479692

Abstract

An eight megabit rad hard SRAM, implemented in 130 nm CMOS technology, uses stacked capacitors within the memory cell for robustness, supply power gating and internally developed array power supplies to achieve very low soft error rates and standby current consumption under 600 nA.

Keywords

RADIATION HARDENING
RANDOM ACCESS MEMORY
TESTING
CAPACITORS
BATTERIES
ROBUSTNESS
EMERGENCY POWER SUPPLIES
ERROR ANALYSIS
VOLTAGE
NEUTRONS

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