A reexamination of the g tensor for defects with dangling bonds in silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 85-89
- https://doi.org/10.1016/0378-4363(83)90231-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961
- Electron paramagnetic resonance of defects in irradiated siliconDiscussions of the Faraday Society, 1961