Model for carrier lifetime extraction from pseudo-MOSFETtransients
- 10 October 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (21) , 2021-2023
- https://doi.org/10.1049/el:19961319
Abstract
The authors propose a pulsing technique for pseudo-MOS transistor, for the advanced characterisation of thin SOI films. The resulting drain current transient can easily be processed to extract the carrier generation lifetime in virgin SOI wafers. The theoretical model and the basic experimental conditions are described.Keywords
This publication has 4 references indexed in Scilit:
- Electrical Characterization of Silicon-on-Insulator Materials and DevicesPublished by Springer Nature ,1995
- Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET'sIEEE Transactions on Electron Devices, 1994
- Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafersIEEE Electron Device Letters, 1992
- Characterization of carrier generation in enhancement-mode SOI MOSFET'sIEEE Electron Device Letters, 1990