Self-Diffusion in Silicon Carbide
- 11 March 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 143 (2) , 623-626
- https://doi.org/10.1103/physrev.143.623
Abstract
In available crystals, the self-diffusivity of carbon has been found to be extrinsic (experimental range 1853 to 2088°C), the carbon self-diffusivity being higher in -type than in -type material. The self-diffusion coefficient for Si is approximately ten times higher than that for carbon between 1927 and 2017°C.
Keywords
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