Towards terahertz operation of CMOS
- 1 February 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01936530,p. 202-203,203a
- https://doi.org/10.1109/isscc.2009.4977378
Abstract
This paper reports a new polysilicon gate separated Schottky barrier diode structure (PGS SBD) which enables operation of receivers at frequencies higher than that limited by the transistors; examples of the building blocks with on-chip antennas operating at 100 to 400 GHz, which suggest the use of CMOS in THz applications; and a potential path to realize 1 THz operation in CMOS.Keywords
This publication has 7 references indexed in Scilit:
- A 410GHz CMOS Push-Push Oscillator with an On-Chip Patch AntennaPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- A 50-GHz Phase-Locked Loop in 0.13-$\mu$m CMOSIEEE Journal of Solid-State Circuits, 2007
- Terahertz Frequency Sensing and Imaging: A Time of Reckoning Future Applications?Proceedings of the IEEE, 2005
- Schottky barrier diodes for millimeter wave detection in a foundry CMOS processIEEE Electron Device Letters, 2005
- High-Efficiency>tex<$W$>/tex<-Band GaAs Monolithic Frequency MultipliersIEEE Transactions on Microwave Theory and Techniques, 2004
- A low-phase-noise 5-GHz CMOS quadrature VCO using superharmonic couplingIEEE Journal of Solid-State Circuits, 2003
- Terahertz technologyIEEE Transactions on Microwave Theory and Techniques, 2002