Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
- 15 February 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (4) , 175-176
- https://doi.org/10.1063/1.89340
Abstract
Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski‐grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.Keywords
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