Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions
- 31 October 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (10) , 913-915
- https://doi.org/10.1016/0038-1101(84)90011-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of reabsorbed recombination radiation on the diffusion length of minority carriers in wide-band-gap semiconductorsJournal of Applied Physics, 1983
- Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductorsJournal of Applied Physics, 1983
- Recombination-generation currents in degenerate semiconductorsSolid-State Electronics, 1978
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973