Thermally stimulated luminescence of thermally grown SiO2films

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Abstract
Thermally stimulated luminescence (TSL) glow curves induced by × and beta irradiations have been performed on SiO2 films, thermally grown in “dry” and “wet” atmospheres. The distribution of the thermoluminescent defects in the oxide thickness has been studied, as well as the effects on the TSL glow curves of annealing treatment, of boron concentration in the silicon substrate, and of alkali ions doping. It follows from these experiments that it is highly probable that the traps and luminescent centers responsible for the TSL emission are of intrinsic character. Furthermore, comparisons with TSL glow curves and the closely related phenomenology of crystalline quartz and amorphous silica let us suggest that the dominant luminescent center emitting at 3.1 eV in silica and quartz is probably the same in all the forms of SiO2, including films.