30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
- 1 April 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (4A) , L232-233
- https://doi.org/10.1143/jjap.23.l232
Abstract
A 30 nm line pattern with 0.4 µm depth was successfully fabricated on a PMMA resist by a 100 kV focused Be++ beam emitted from Au–Si–Be ternary alloy ion source. The line width fabricated decreased with the decrease in ion dose.Keywords
This publication has 5 references indexed in Scilit:
- 100 keV focused ion beam system with a E×B mass filter for maskless ion implantationJournal of Vacuum Science & Technology B, 1983
- High current density Ga+ implantations into SiApplied Physics Letters, 1979
- High-resolution, ion-beam processes for microstructure fabricationJournal of Vacuum Science and Technology, 1979
- A high-intensity scanning ion probe with submicrometer spot sizeApplied Physics Letters, 1979
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978