The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuum
- 1 February 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (2) , 233-244
- https://doi.org/10.1088/0022-3727/9/2/014
Abstract
By employing the techniques of low energy electron diffraction, Auger spectroscopy and photo-electron spectroscopy, an investigation has been made of the influence of temperature upon the structure and stoichiometry of (100) surfaces of InP, GaP and GaAs. The study has been conducted under conditions of ultra-high vacuum (base pressures of less than 1*10-9 Torr).Keywords
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