Liquid phase epitaxial growth of InGaAsP on grooved substrates
- 1 November 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 69 (1) , 161-164
- https://doi.org/10.1016/0022-0248(84)90024-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser with Smooth Far Field Pattern and Stable Aging CharacteristicsJapanese Journal of Applied Physics, 1982
- V-grooved substrate buried heterostructure InGaAsP/InP laserElectronics Letters, 1981
- Liquid phase epitaxial growth of Ga1−xAlxAs on channeled substratesJournal of Crystal Growth, 1978
- Channeled substrate buried heterostructure GaAs- (GaAl)As injection lasersJournal of Applied Physics, 1976
- Growth characteristics of GaAs-Ga1−xAlxAs structures fabricated by liquid-phase epitaxy over preferentially etched channelsApplied Physics Letters, 1976