FAST PLASMA DEPOSITION OF CARBON AND SILICON LAYERS

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Abstract
By separating plasma production and plasma deposition and by taking advantage of the high specific ionizing power of thermal plasmas, very high deposition rates on large areas of amorphous C-H and Si-H are obtained. The layers have been analyzed by several methods, among which ellipsometry (band gap, absorption in the visible C-H, Si-H bonding types in the infrared), nuclear techniques (hydrogen depth profile), ESCA (type), diffraction (Crystallinity). The plasma is produced at high pressure (0.1 - 1 bar) in a cascaded arc in a carrier gas (argon). Downstream the feed gases (CH4 resp. SiH4) and additional gases (H2) are admixed to the mainstream. Nearly complete dissociation and charge transfer from argon to Si and C takes place whereas the plasma is accelerated to sonic velocities at the high temperature (1 eV)

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