InGaAsP/InGaAs heterojunction p-i-n detectors with low dark current and small capacitance for 1.3–1.6 μm fibre optic systems

Publisher Website
Google Scholar
Abstract
A new long wavelength p-i-n photodetector, consisting of an In0.53 Ga0.47 As absorbing layer and an adjacent InGaAsP p-n junction is demonstrated. These diodes exhibit dark currents as low as 0.2 nA and a capacitance < 0.5 pF at − 10 V for a device area of 1.3 × 10−4 cm2. The external quantum efficiency is ⋍ 60% at λ = 1.3 μm for front illumination. A systematic study of the background doping of the quaternary layers using different InP sources is also reported.