Carrier concentration and mobility in n-and p-type ZnTe-Al
- 1 July 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (13) , 957-960
- https://doi.org/10.1016/0038-1098(71)90439-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electrically active point defects in cadmium tellurideMetallurgical Transactions, 1970
- High temperature electrical properties of CdSe: Evidence for a native donorSolid State Communications, 1970
- Evidence for a native donor in ZnSe from high temperature electrical measurementsSolid State Communications, 1969
- Partial Pressures of Zn and Te2 over ZnTe up to 917°CJournal of the Electrochemical Society, 1969
- The effect of doubly ionizable vacancy acceptors on the conductivity of donor doped semiconducting compounds with special reference to CdTe and ZnTeJournal of Physics and Chemistry of Solids, 1965
- Self-Compensation-Limited Conductivity in Binary Semiconductors. II.-ZnTePhysical Review B, 1964
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- The high temperature conductivity of ZnTe in zinc vaporJournal of Physics and Chemistry of Solids, 1964
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- PURIFICATION OF II–VI COMPOUNDS BY SOLVENT EXTRACTIONApplied Physics Letters, 1962