Small-signal model with frequency-independent elements for the avalanche region of a microwave negative-resistance diode
- 1 October 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (10) , 883-891
- https://doi.org/10.1109/t-ed.1970.17091
Abstract
An experimentally derived four-element incremental model for the avalanche region of a microwave negative-resistance diode and a simplified measuring procedure for determining the element values are presented. The element values depend on bias but not on frequency. The four-element model predicts the same frequency behavior as the theoretically derived Gilden-Hines model when one degree of freedom is eliminated. Comparison with theory predicts a simple low-frequency (1-MHz) indirect measurement of device drift region carrier transit time.Keywords
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