Theoretical investigations of experimentally-observed Open-Circuit Voltage-Decay (OCVD) curves
- 1 November 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (11) , 1101-1109
- https://doi.org/10.1016/0038-1101(83)90009-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Depletion layer effects in the open-circuit- voltage-decay lifetime measurementSolid-State Electronics, 1981
- A generalised approach to lifetime measurement in pn junction solar cellsSolid-State Electronics, 1981
- Analysis of the photo voltage decay (PVD) method for measuring minority carrier lifetimes in P-N junction solar cellsJournal of Applied Physics, 1981
- Theory of photo induced open circuit voltage decay in a solar cellSolid-State Electronics, 1981
- Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decayIEEE Transactions on Electron Devices, 1979
- Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurementsIEEE Transactions on Electron Devices, 1978
- Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cellsSolid-State Electronics, 1977
- Normal modes of semiconductor p-n–junction devices for material-parameter determinationJournal of Applied Physics, 1976
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- On the Transient Behavior of Semiconductor RectifiersJournal of Applied Physics, 1955