Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic-electron-emission microscopy
- 12 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (7) , 940-942
- https://doi.org/10.1063/1.116950
Abstract
We report ballistic‐electron‐emission microscopy (BEEM) imaging and spatially resolved spectroscopy of InxGa1−xAs/GaAs misfit dislocations 800 Å below the surface. Majority‐carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores.Keywords
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