Minority carrier lifetime improvement by single strained layer epitaxy of InP

1 February 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (2) , 98-100
https://doi.org/10.1109/EDL.1986.26307

Abstract

By applying a single LPE-grown isoelectronically doped strained layer, on top of a conventional InP wafer, a strong reduction of dislocation and deep level density occurs. As a result an improvement in minority carrier lifetime and diffusion length and a better uniformity across the wafer is achieved. This is demonstrated by the comparison of p-n diodes fabricated with and without the strained layer.

Keywords

CHARGE CARRIER LIFETIME
EPITAXIAL GROWTH
INDIUM PHOSPHIDE
LATTICES
EPITAXIAL LAYERS
ELECTRON MOBILITY
SCHOTTKY DIODES
SEMICONDUCTOR DEVICE DOPING
ZINC
SUBSTRATES

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