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Space charge effects in MNOS memory devices and endurance measurements
Home
Publications
Space charge effects in MNOS memory devices and endurance measurements
Space charge effects in MNOS memory devices and endurance measurements
JC
J.R. Cricchi
J.R. Cricchi
FB
F.C. Blaha
F.C. Blaha
MF
Michael D Fitzpatrick
Michael D Fitzpatrick
FS
F.M. Sciulli
F.M. Sciulli
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1 January 1975
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1975.188922
Abstract
No abstract available
Keywords
STRESS TESTING
VOLTAGE
ELECTRIC FIELD
STRESS
SILICON
ELECTRODES
TUNNELING
SYSTEM TESTING
SPACE CHARGE
Cited
Cited by 2 articles
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