Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures
- 1 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3735-3736
- https://doi.org/10.1063/1.341370
Abstract
Double-barrier/single-well resonant tunneling structures based on InAlAs/InGaAs were vertically integrated on an InP substrate to obtain devices with multiple negative-differential resistance (NDR) regions. These devices, with either two or five tunneling structures, exhibited uniform current peaks and valleys and also had NDR regions about equally spaced in bias voltage. The devices were used in simple circuits to demonstrate three or six stable logic levels which could be set with current pulses.This publication has 4 references indexed in Scilit:
- Application of a resonant tunnelling structure to demonstrate subsurface damage and surface migration on InGaAs during AuGe contact annealSemiconductor Science and Technology, 1988
- Combining resonant tunneling diodes for signal processing and multilevel logicApplied Physics Letters, 1988
- Heterojunction double-barrier diodes for logic applicationsApplied Physics Letters, 1987
- Multiple-Valued Logic—its Status and its FutureIEEE Transactions on Computers, 1984