Study of Ion Implanted n+ Layers for Silicon solar Cells
- 1 January 1978
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Direct observations of defects in implanted and postannealed silicon wafersApplied Physics Letters, 1976
- Electrical activation processes of p+ions channeled along the [110] axis of silicon: Effect of annealing on carriers profiles shapeRadiation Effects, 1975
- A technique to obtain deep penetrating ohmic contacts for electrical measurements on ion implanted siliconJournal of Physics E: Scientific Instruments, 1974
- Doping and radiation damage profiles of P+ions implanted in silicon along the [110] axisRadiation Effects, 1974