Ellipsometric investigations of oxide films on Ga As
- 1 January 1964
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 25 (1-2) , 208-211
- https://doi.org/10.1051/jphys:01964002501-2020801
Abstract
The optical constants of GaAs substrates have been determined by ellipsometry for λ = 5 461 Å. They are n = 3.923 and k = 0.304. The fundamental equation of ellipsometry was solved for the case of transparent films on GaAs. Investigations on thermally oxidized GaAs revealed that the resulting film has a complex structure, with an accumulation of arsenic at the GaAs-film interfaceKeywords
This publication has 8 references indexed in Scilit:
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Thermal Oxidation of GaAsJournal of the Electrochemical Society, 1962
- Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium ArsenidePhysical Review B, 1961
- Electrodeposition of Cobalt-Molybdenum AlloysJournal of the Electrochemical Society, 1961
- THE OXIDATION OF INTERMETALLIC COMPOUNDS. I. HIGH TEMPERATURE OXIDATION OF InSb1The Journal of Physical Chemistry, 1960
- Some New Formulas for Determining the Optical Constants from Measurements on Reflected LightJournal of the Optical Society of America, 1955
- Messungen an Gallium‐ und Indium‐Verbindungen. X. Über die Chalkogenide von Gallium und IndiumZeitschrift für anorganische und allgemeine Chemie, 1934