Growth of CdxHg1-xTe by a pressurised cast-recrystallise-anneal technique
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2) , 121-129
- https://doi.org/10.1016/0022-0248(82)90312-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- CdTe growth by “multipass thm” and “sublimation thm”Journal of Crystal Growth, 1981
- Wrap around furnace elementsJournal of Physics E: Scientific Instruments, 1981
- Infrared optical absorption of Hg1−xCdxTeJournal of Applied Physics, 1979
- The effects of growth speed on the compositional variations in crystals of cadmium mercury tellurideJournal of Crystal Growth, 1979
- An improved system for the Bridgman growth of crystals with toxic and/or highly volatile componentsJournal of Crystal Growth, 1979
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Crystal growth of Hg1−Cd Te using Te as a solventJournal of Crystal Growth, 1972
- Growth and properties of CdxHg1?xTe crystalsJournal of Materials Science, 1969
- The motion of liquid alloy zones along a bar under the influence of an electric currentPhilosophical Magazine, 1964