Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination
- 15 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (6) , 407-409
- https://doi.org/10.1063/1.92380
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP–InP DH LasersJapanese Journal of Applied Physics, 1979
- GaInAsP/InP fast, high-radiance, 1.05-1.3-µm wavelength LED's with efficient lens coupling to small numerical aperture Silica optical fibersIEEE Transactions on Electron Devices, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Threshold behavior of (GaAl)As-GaAs lasers at low temperaturesJournal of Applied Physics, 1978
- One-dimensional overlap functions and their application to Auger recombination in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959