Impact of the substrate quality on the low frequency noise of silicon diodes

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Abstract
The low frequency noise of large area n+p silicon diodes, fabricated on Czochralski and floating zone p‐type wafers subjected to different thermal pretreatments, is measured as a function of forward bias at room temperature. The noise current spectral density SI varies with frequency f as fn where n is slightly smaller than 1.0 for low bias, becomes equal to 1.0 for medium bias levels, and increases to slightly above 1.0 for high bias values. The current dependence of SI is found to vary with current I as Iβ with β=1.5. This specific frequency and current dependence of SI indicates that the measured noise is of the McWhorter type and is most likely caused, for the Czochralski substrates, by recombination via oxygen precipitation related extended defects located in the bulk depletion region of the junction. The recombination process is thought to be modulated by electron trapping in the same defects which introduces long time constants and the low frequency noise observed in our experiments.

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