A new ?-type negative resistance device of integrated complementary FET structure
- 1 July 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (7) , 448-449
- https://doi.org/10.1109/T-ED.1974.17946
Abstract
A new type of negative resistance diode having a Λ-type I-V characteristic is presented. The device is constructed by a functional integration of two complementary FET's of an n- and p-channel depletion mode. The operational principle together with some experimental results are described.Keywords
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