Vacancy interactions in GaAs
- 15 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 591-594
- https://doi.org/10.1063/1.337452
Abstract
Isochronal annealing of zinc- or silicon-doped GaAs as well as undoped semi-insulating or low-resistivity materials has been investigated by positron lifetime measurements. For impurity concentrations larger than 4.5×1017 cm−3, only monovacancy complexes such as ZnGaVAs, SiAsVGa, or AsGaVGa are observed and they yield a positron lifetime of 265±5 ps. For impurity concentrations less than 1×1017 cm−3, divacancies dominate and yield a lifetime of 295±5 ps. The concentrations of grown-in vacancies, either VAs or VGa, are both estimated to be in the range of (1–4)×1017 cm−3.This publication has 8 references indexed in Scilit:
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