Electrical resistivity due to interstitial hydrogen and deuterium in V, Nb, Ta and Pd

Publisher Website
Google Scholar
Abstract
The resistivity due to hydrogen and deuterium in V, Nb, Ta and Pd has been measured as a function of concentration, temperature and isotopes. The measurements were performed at temperatures in the ranges 120-670 degrees C for V, 120-720 degrees C for Nb, and 120-770 degrees C for Ta, and at 170 degrees C for Pd, and in the concentration ranges of 0-0.1 atomic ratios for V, Nb and Ta and 0-0.02 atomic ratios for Pd in the alpha -phase. Within the ranges of concentration investigated, the resistivity due to H(D) in these metals increases linearly with H (D) concentration. The values are found to be almost independent of temperature for V, Nb and Ta. Values of the resistivity increase due to one atomic per cent of H (D) are V: 0.85+or-0.02 (H), 0.83+or-0.02 (D); Nb:0.63+or-0.01 (H), 0.62+or-0.01 (D); Ta: 0.71+or-0.01 (H), 0.71+or-0.01 (D); Pd: 0.68+or-0.05 (H), 0.62+or-0.05 (D); all values are in mu Omega cm.