Electro-Thermomigration in NMOS LSI Devices

• 1 April 1981
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/irps.1981.363001

Abstract

Keywords

• ALUMINUM
• HISTORY
• ELECTROSTATIC DISCHARGE
• FAILURE ANALYSIS
• METALLIZATION
• BIPOLAR TRANSISTORS
• MATHEMATICAL MODEL