Correlation entre largeur de bande interdite et l'energie libre d'atomisation des materiaux semi-conducteurs
- 1 April 1966
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 27 (4) , 783-793
- https://doi.org/10.1016/0022-3697(66)90230-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Thermal Dependence of the Absorption Band Edge in Zincblende-type Cadmium Sulphide obtained in Pressure ExperimentsNature, 1963
- Infrared Lattice Bands in AlSbPhysical Review B, 1962
- On the Description of Covalent Bonds in Diamond Lattice Structures by a Simplified Tight-Binding ApproximationJournal of Applied Physics, 1962
- Some Electrical and Optical Properties of ZnSeJournal of Applied Physics, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- A relation between the binding energy and the band-gap energy in semiconductors of diamond or zinc-blende structureJournal of Physics and Chemistry of Solids, 1961
- Lattice Vibrations in Silicon and GermaniumPhysical Review Letters, 1959
- Infrared lattice vibration studies of polar character in compound semiconductorsJournal of Physics and Chemistry of Solids, 1959
- The measure of electronegativityTransactions of the Faraday Society, 1953
- Polarisability and dielectric constant of ionic crystalsTransactions of the Faraday Society, 1949