MOSFET thresholds at 4.2 K induced by cooling bias
- 1 September 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (9) , 606-607
- https://doi.org/10.1109/T-ED.1974.17975
Abstract
The threshold voltage of a MOSFET at 4.2 K is affected by the particular bias condition present while the device is being cooled. Measurements disagree with a simple model based upon stored bulk-charge.Keywords
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