On the S‐Shaped Characteristic of Semiconductors at Low Temperature

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Abstract
It is shown that when the energy level pattern of an impurity in a semiconductor is reduced to the ground state and one excited state, and when the occupation of this excited state is a necessary step for both impact excitation and relaxation, an S‐shaped dependence of the carrier density upon the electric field dependent impact parameters is obtained. Simple functions of the impact parameters are measured against electric field for ZnTe at 77 K using the above theory.

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