A nonvolatile memory element based on an organic field-effect transistor
- 6 September 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (10) , 1823-1825
- https://doi.org/10.1063/1.1788887
Abstract
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.This publication has 18 references indexed in Scilit:
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