Suppression of thermal conversion in Cr-doped semi-insulating GaAs
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (12) , 8229-8231
- https://doi.org/10.1063/1.325922
Abstract
Thermal conversion in the vicinity of the surface of a Cr‐doped semi‐insulating GaAs wafer to n‐type conductivity was effectively suppressed by annealing the wafer under arsenic vapor pressure. For the ion implantation of Si into qualified wafers, the arsine‐controlled capless‐anneal method provided a uniform and reproducible carrier concentration profile which was in good agreement with that predicted by the LSS theory. The doping efficiency of 100% was attained without anomaly due to thermal conversion.This publication has 3 references indexed in Scilit:
- Capless anneal of ion-implanted GaAs in controlled arsenic vaporJournal of Applied Physics, 1979
- Low-noise GaAs FET's prepared by ion implantationIEEE Transactions on Electron Devices, 1978
- Low-dose n-type ion implantation into Cr-doped GaAs substratesSolid-State Electronics, 1977