Atomistic picture of interfacial mixing in the Si/Ge heterostructures
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 79-82
- https://doi.org/10.1016/0039-6028(92)91093-q
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Reverse temperature dependence of Ge surface segregation during Si-molecular beam epitaxyJournal of Applied Physics, 1991
- Direct imaging of interfacial ordering in ultrathin ( superlatticesPhysical Review Letters, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of SbJapanese Journal of Applied Physics, 1990
- Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxyApplied Physics Letters, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Silicon/germanium strained layer superlatticesJournal of Crystal Growth, 1989
- Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringApplied Physics Letters, 1989
- Surface segregation of Sb on Si(100) during molecular beam epitaxy growthSurface Science, 1988
- Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982