Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs

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Abstract
The photoexcitation effects on the growth rate have been demonstrated in the vapor phase epitaxial growth of. The growth rate is enhanced by irradiating the substrate zone with a 249 nm excimer laser over the whole of temperature range 480° ∼ 700°C and increases in proportion to the incident power. However, the growth rate is reduced by irradiating the source zone with a 249 or 222 nm excimer laser at low temperatures below 650°C. These effects have been concluded to be caused not by thermal‐induced reactions but, rather, by photoinduced reactions because of sharp wavelength dependence. Infrared absorption analyses have shown that the reduction of by is promoted by irradiation with a 249 or 222 nm laser. This photodissociation of causes the growth rate reduction in the case of source zone irradiation.

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