Formation of Conductive SrVO3 Films on Si Substrates
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12A) , L2059-2061
- https://doi.org/10.1143/jjap.30.l2059
Abstract
Formation of conductive SrVO3 films on Si substrates has been investigated in a coevaporation method of SrO x and VO x . It has been found that the conductive films are formed only when hydrogen gas is introduced near the samples during film deposition. The lowest resistivity of the films so far obtained is 1.3 mΩ·cm. It has also been found that the insulating transition layer is formed near the interface with the Si substrate.Keywords
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